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The details of a monolithically integrated, five-channel, dual carrier/wavelength per channel, polarisation multiplexed, coherent QPSK receiver on InP operating at 114 Gbit/s per channel are discussed.
A 10-wavelength, polarization-multiplexed, monolithically integrated InP transmitter PIC is demonstrated for the first time to operate at 112 Gb/s per wavelength with a coherent receiver PIC.
In this paper transmission-mode GaN photocathodes was activated by Cs/O, its quantum efficiency curve and the factors which influenced the quantum efficiency mostly were studied. Transmission-mode GaN photocathodes was grown by Metal-Organic Chemical Vapor Deposition (MOCVD).
In this paper, two comparative experiments have been carried out to study Cs' effect on the stability of GaAs photocathode. Experiments show that Cs of a certain concentration helps extend the life of photocathode, and the decay of photocathode is not caused by Cs desorption but oxide adsorption.
With the limitation of epitaxial growth technique, the approximately exponential-doping structure is actually a special kind of gradient-doped structure, in which the doping concentration in the active-layer of the III-V photocathode varies exponentially from bulk to surface. This doping structure can result in a linearly downward band structure which helps form a constant built-in electric fields...
In view of the important application of GaAs and GaN photocathodes in electron sources [1,2], the difference in the photoemission behavior, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes has been investigated using the multi-information measurement system. The reflection-mode GaAs and GaN photocathode samples both were grown by...
To study the effect surface defects imposed on NEA GaAs photocathode, a surface analysis instrument shown in Fig. 1 has been designed, which is composed of a microimager, a 2-D displacement platform, an auto-focus equipment, a computer.
We theoretically demonstrate that it is possible to realize terahertz (THz) fundamental band-gap in InAs/GaSb type-II superlattices (SLs). The presence of such THz band-gap can result in a strong cut-off of optical absorption at THz bandwidth for relatively high-temperatures. This study is pertinent to the application of InAs/GaSb type-II SLs as optoelectronic devices such as THz photodetectors.
III-V nitride-based HEMT technology has made rapid progress over the last decade. Benefiting from the extremely high polarization charge, in this work, we demonstrate record high DC current density (2.9 A/mm) and very high extrinsic transconductance (~430 mS/mm) AIN/GaN HEMTs.
GaAs based MOSFETs have attracted significant interest as a potential technology for both digital and RF applications. Among many candidate gate insulating materials, the native oxide of InAlP offers a low leakage current and modest interface state density while at the same time being simple to fabricate and offering a path to low-cost devices. Both enhancement-mode and depletion-mode MOSFETs with...
GaAs-channel MOSFETs employing InAlP native oxide gate dielectrics and achieving record microwave performance are reported. Devices with 1 mum gate length demonstrate measured ft's of 17.0 GHz with fmax's of 74.8 GHz. Improved RF performance is obtained by vertical scaling of the device heterostructure to incorporate a 7.5 nm thick gate oxide layer. Despite the thin InAlP native oxide gate dielectric...
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