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A series of constant drain current deep level transient and optical spectroscopies (CID‐DLTS/DLOS) is described, which allows characterization of deep levels with lateral spatial resolution in fully fabricated high electron mobility transistors (HEMTs). The techniques are used to examine the role of SiNx passivation in the access region of AlGaN/GaN HEMTs, in part to verify lateral resolution capabilities...