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A sulfur‐annealing treatment was investigated to control the sulfur content of epitaxial CuInS2 films grown on GaAs substrate by PLD. The sulfur‐annealing treatment improved the surface roughness and film crystallinity. Photoluminescence measurements obtained using the confocal microspectroscopy demonstrated that the annealed films show band‐edge emissions over a very large area. Electron‐probe microanalysis...
Thin films of epitaxial CuInS2 were deposited on a GaAs substrate at a temperature of 500 ºC by the pulse‐laser‐deposition method. Surface and cross‐section scanning electron microscopy (SEM) images were taken for all the films, with thicknesses estimated to range between 0.5‐1 μm. X‐ray diffraction (XRD) and Raman scattering confirmed the chalcopyrite structure of the films. For a film deposited...
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