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In this work, we address the charge trapping properties of Ge dangling bond (DB) defects – GePb1 centers as typified by electron spin resonance spectroscopy (ESR) – found at the interfaces between condensation‐grown Si1−xGex (0.28 < x < 0.8) alloys and insulating SiO2. The ESR observation of singly‐occupied paramagnetic GePb1 centers, carried out at 4.3 K, is complemented by temperature‐dependent...