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We present experimental and theoretical results showing that the migration of interstitial carbon atom (Ci) in silicon depends on its charge state. The experimental results were obtained from the analysis of changes in concentrations of the Ci defect, which were determined from deep level transient spectra, in n+‐p diodes subjected to irradiation with 4–6 MeV electrons or α‐particles at T ≤ 273 K...
New experimental and theoretical results on the silicon di‐interstitial (I2) and its interactions with oxygen and carbon impurity atoms in Si crystals are reported. Electronic structure calculations indicate that I2 has an acceptor and a donor level in the gap, which are close to the conduction and the valence band edges, respectively. Experimental results, which support the theoretically predicted...
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