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Current Aperture Vertical Electron Transistors (CAVETs) benefit from the high electron mobility of the 2-dimensional electron gas (2-DEG) in the lateral direction and the better field distribution of the vertical geometry. Current flows laterally in the 2-DEG at the AlGaN/GaN heterojunction and is directed vertically down to the drain, through the aperture (Fig.1). A current blocking layer (CBL) is...
We demonstrate AlGaN/GaN heterojunction bipolar transistors (HBTs) by ammonia molecular beam epitaxy (NH3 MBE). The several benefits offered by NH3 MBE for the growth of GaN based vertical electronic devices are discussed. To obtain good ohmic contacts to the base layer, devices were fabricated with two different processes involving regrowths – regrown base contact (Wafer A) and regrown emitter (Wafer...
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