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This paper presents a practical method of drift–diffusion device simulation for evaluating the effects of mechanical stress on n-type silicon semiconductor devices. The device simulation incorporates an electron mobility model for considering the effects of stress. In this paper, we focus on stress effects that are induced by applying inplane biaxial stress to the devices. Therefore, two physical...
The effects of uniaxial loading on n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) were simulated by a drift-diffusion device simulation. The device simulation includes an electron mobility model for considering the effects of mechanical stress. The variations in the relative occupancy, the intervalley scattering and the effective mass of electrons were taken into account in the...
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