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In order to achieve high density and high performance package, through silicon vias (TSVs) technology has been desired. Our purpose is the development of silicon interposer which has TSVs and fine multilayer Cu wiring on both side. Since silicon substrate has a quite flat and smooth surface, it can be expected to form fine wiring such as global layer of device. Furthermore, silicon interposer can...
A novel silicon interposer (SilP) BGA package (PKG) - SilP PKG - has been developed and qualified through test chip. It features three key process technologies; Cu-filled through Si via (TSV), fine pitch multi-layer wiring with Cu- plating, and micro-bump interconnect. The cost-conscious fabrication process flow has been developed based on the build-up print boards' Cu-plating technology and Si wafer...
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