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Wire bonding is one of the most important processes which connected the die and lead frame in LED packaging. Compared with other interconnect technology, wire bonding is much easier to be accomplished. Nevertheless, the gradual increased price of gold makes the cost of bonding increased. As a substitute material of gold, copper comes into sight. Its electrical conductivity is 30% higher than gold...
For nearly five years, the photoelectric conversion efficiency of the perovskite-based solar cells are extraordinarily developed at a high speed, showing a good application prospect. It is necessary to further optimize the devices and make them industrially feasible. The different temperature requirements of perovskite solar cells during the preparation process will result in undesirable thermal stresses...
3D integration and packaging with through silicon via (TSV) is a promising method to overcome the limitation of integration scale in Micro-Electro-Mechanical Systems (MEMS) packaging. It is helpful to realize high density and reliability micro-devices. The technology of fabricating copper (Cu) TSVs by electroplating is applied to provide signal connection in vertical direction. However, the fabrication...
In this paper, the failure mechanisms of the direct bonding copper (DBC) substrate under the condition of temperature cycling are studied. The cyclic temperature considered ranges from −40°C to 200°C. Furthermore, finite element method is used to optimize the DBC substrate structure in order to reduce the thermal stress and improve the reliability and fatigue life of power modules. Various factors...
As the most promising candidate for the realization of high-efficiency light sources for general lighting, the high power lighting emitting diodes (LEDs) still have reliability issues that hinder the large scale application of LED devices. Nowadays, the reliability is becoming an essential barrier for LED devices to substitute the traditional light sources. Before it is applied into mass production,...
The problem of heat dissipation of high power electronics such as IGBT (Insulated Gate Bipolar Transistors) has puzzled us for long time. If the heat generated from the chips could not be eliminated away from the devices, the failure rate would rise rapidly. To deal with this problem, the micro pumps along with the microchannel embedded in the DBC substrate are proposed to remove the heat actively...
Undesired thermal residual stresses and strains always exist in GaN epitaxial film after the process of metal organic chemical vapor deposition (MOCVD) due to difference in thermal expansion coefficients between the silicon substrate and epitaxial layer. These stresses would mostly result in defects such as dislocations, surface roughness, and even cracks in epitaxial layer preventing further device...
Selective induction heating for wafer level bonding is presented. The purpose of this paper is to investigate the relationships between the geometry of solder loop and temperature distribution in induction heating. Using finite element method (FEM) and IR thermal imager, temperature distribution and variation are explored, which shows that the temperature on the solder loops is a function of the area...
Undesired residual stress always exists in light emitting diode (LED) after the process of metalorganic chemical vapor deposition (MOCVD) due to difference in thermal expansion coefficient of different layers, doping, and lattice mismatch. Residual stress would mostly induce defects in the process of LED chips, the packaging, accelerated testing and their applications. The influence of strain/stress...
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