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The performance of an evolutionary FinFET design (iFinFET) is benchmarked against that of the conventional bulk FinFET and stacked-nanowire gate-all-around (GAA) FET, through3-D device simulations, for both n-channel and p-channel transistors. The results show that the iFinFET provides for improved electrostatic integrity relative to the FinFET, but with substantially less gate capacitance penalty...
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