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The benefits of a super-steep retrograde (SSR) fin doping profile, which can be achieved using the oxygen insertion technology, are quantified via 3-D technology computer-aided design simulations for the 7/8-nm bulk-Si FinFET technology targeting low-power applications. A calibrated compact model is then used to estimate the six-transistor static RAM cell performance and yield. The SSR FinFET technology...
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