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Through-silicon via (TSV) technology has been widely investigated recently for 3-D electronic packaging integration. Reducing TSV wafer warpage is one of the most challenging concerns for successfully subsequent processes. In this paper, a wafer-level warpage modeling methodology has been developed by the finite element analysis method using an equivalent material model. The developed modeling methodology...
The 3 D interconnect technology with Thru Silicon Via (TSV) have gained tremendous advancement in recent years. Final adoption of TSV technologies requires a robust and cost competitive TSV processes. Sidewall plated TSV with polymer filling can reduce half of total process steps from TSV copper (Cu) seed deposition to front-via1 expose. TSV plating time can be reduced ~ 60% for sidewall plated TSV...
In the current 3D integration technology, the control of wafer warp is needed to ensure uniform photolithography, good bonding areas and other major processes that requires flat wafer surface. In this paper, we found out that the wafer warpage was increased with increasing TSV density. The highest wafer warpage was observed after Cu annealing base on step by step warpage monitor. Wafer warpage reduction...
In this work the impact of the layout of the top metal of the integrated circuit (IC) and the most relevant process and material parameters of IC wafer fab and assembly fab on package stress induced damages to the ICs during temperature cycling is studied by means of thermo-mechanical simulations with experimental verifications. Besides die size, the materials for passivation, silicon thickness, molding...
Interconnect forms a part of all ESD protection networks. ESD discharges can cause both latent and permanent damages in interconnect structures. ESD discharges, that barely affect the resistance of a structure, can reduce the electromigration lifetime of metal structures by more than a factor 100. Also snapback behavior, which limits the ESD robustness of silicon based interconnect structures, is...
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