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Modeling equations derived from the modified Chalmer's model to improve the active current modeling capability for GaN high electron mobility transistor (HEMT) has been demonstrated. The modifications addresses issues of modeling active current for GaN HEMT such as the limitations of existing current models to effectively model the output conductance across the measured VGS range and the divergent...
Two novel auxiliary patterns are developed to separately excite the even-mode and odd-mode waves of any on-wafer symmetrical coupled CPW lines. The two patterns, which are simple transmission lines with two test ports in mirror symmetry, can be used to accurately characterize even-mode and odd-mode respectively. With this method, a coupled DC block filter and a 12dB coupler are modeled in MDS and...
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