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Polycrystalline silicon has attracted our interest for their applications. Its electrical characteristics are closely correlated to the crystalline structure after electrical activation. The parameters related to crystalline structure are strongly influenced by implant and annealing techniques. We investigate the influence and sensitivity of implant / annealing / microstructure / mobility on sheet...
Strain techniques have been adopted and widely used in the advanced nodes since early 65nm for carrier mobility improvement. For PMOS, eSiGe incorporation in the SD is the process of choice to induce compressive strain in the channel for mobility improvement. To further lower the contact resistance, it is preferred to boost Boron concentration for pSD formed by eSiGe process. Normal implant process...
Several approaches of solid phase epitaxy (SPE) formed embedded SiC (eSiC) scheme have been investigated on 28 nm node technology. The single SPE thermal process by LSA only with post S/D scheme is reported to accommodate high carbon concentration as well as low sheet resistance in this work. Cluster carbon with tilted angle implantation is designed to further simplify process and increase channel...
In this letter, for the first time, the integration benefits of a molecular carborane (CBH-C2B10H12) implant on a state-of-the-art 28-nm logic flow are demonstrated and discussed via advanced modeling. It is shown that, by integrating CBH, pLDD formation can be optimized to provide device benefits via profile/damage engineering.
We investigated molecular carbon (C16H10) implant as a replacement for both a monomer carbon co-implant as well as a Ge pre-amorphization step for ultra-shallow junction (USJ) formation in a p-MOSFET SDE doping process in a 40 nm logic device. Carbon is often used in the p-FET extension sequence because it reduces transient enhanced diffusion (TED) by trapping silicon interstitials. However, a Ge...
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