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A bipolar-mode multibit soft-error mechanism in static random-access memory (SRAM) devices has been explored by utilizing a 3D device simulation of an inverter constructed with a driver n-MOSFET, a load resistor, and capacitors. Generally, a well tap was not set at every SRAM unit cell so as to increase the packing density. We have introduced a model structure where a p-well for arranging the driver...
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