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In this study, ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for the development of future ferroelectric random access memory capacitors. A 10 nm thick HZO sample annealed at 400°C for 60 s in an N2 atmosphere after TiN top electrode deposition showed large switching polarization (~45 μC/cm2) and low ferroelectric...
Despite theoretical predictions of significant performance improvement in Flash memory devices using tunnel-barrier-engineered (TBE) structures, there have been very few reports that demonstrate experimental verification. In this work, we have studied the role of factors such as high- layer thickness and annealing recipe on the performance of gate stacks by electrical...
A novel 3-D NAND flash memory device, VSAT (Vertical-Stacked-Array-Transistor), has successfully been achieved. The VSAT was realized through a cost-effective and straightforward process called PIPE (planarized-Integration-on-the-same-plane). The VSAT combined with PIPE forms a unique 3-D vertical integration method that may be exploited for ultra-high-density Flash memory chip and solid-state-drive...
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