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High dose (5E15/cm2) and low dose (5E13/cm2) Ultra-Shallow-Junction (<10nm) implantation into 100-200nm Ge-epi on Si wafers with 308nm laser sub-melt to melt annealing for dopant activation, damage recovery and mobility effects was investigated. Half wafer Ge-PAI was used for additional amorphization. Ge-epi implant damage recovery annealing shows a TW reverse trend from that typical in Si with...
Laser spike anneal (LSA) is one of major millisecond anneal techniques for forming ultra-shallow and highly activated junctions. With its ultra-fast heating capability, LSA has found a range of applications in ultra-shallow junction (USJ) applications. However, there are some challenges associated with the technique that need to be effectively addressed to ensure the quality of LSA processes. One...
The effect of heat treatment on the sensitization behavior of Alloy 182 weld was explored by employing chemical and electrochemical evaluation techniques. The results showed that Alloy 182 weld heat treated at 650°C for 24h was susceptible to intergranular corrosion. Interdendritic corrosion was also observed when the weld was sensitized.
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