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Harvard architecture uses physically separate memories for their instructions and data. In the case of a flash memory with a buffer system, separate data and instruction buffers can lead to diversification of a flash architecture and achieve the high performance by overcoming effectively the limitations of a unified buffer. So, the proposed NAND flash system is composed of two separate buffers for...
4-bit/cell devices have been studied to increase the flash memory density using multi-bit operation [1] or both multi-bit and multi-level concepts at the same time [2]. Moreover, physically isolated two charge storage nodes combined with the non-conductive charge trapping layers give an opportunity to achieve even 8-bit/cell operation [3]. In this paper, separated double-gate fin flash memory devices...
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