The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Recently, various kinds of novel flash memory devices have been incessantly developed. Especially, a number of devices in vertical structures have been proposed for higher integration. In many cases, the silicon channels are constructed in a vertical manner so that the memory cells share a common channel. For the sake of higher integration density, thickness of silicon channel should be essentially...
4-bit/cell devices have been studied to increase the flash memory density using multi-bit operation [1] or both multi-bit and multi-level concepts at the same time [2]. Moreover, physically isolated two charge storage nodes combined with the non-conductive charge trapping layers give an opportunity to achieve even 8-bit/cell operation [3]. In this paper, separated double-gate fin flash memory devices...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.