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With the device dimension scaling down, thickness-dependent property optimization for Oxide-Nitride-Oxide (ONO) used in SONOS flash memory is an important issue for the compatibility with scaled CMOS technology. With regard to the thickness-dependent property, trap-based erase behaviors should be investigated thoroughly because electron back-tunneling from gate make erase operation difficult. This...
A novel 2-bit recessed channel nonvolatile memory device is proposed in this paper. Physically separated two charge-trapping nodes are lifted up to achieve large sensing margin in highly scaled memory devices. A successful 2-bit/cell operation with effective suppression of second bit effect is achieved by adopting the lifted charge-trapping node scheme. In addition, the effect of the source/drain...
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