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Conventional Extended gate STI based LDMOS devices often have an overlap between gate and STI resulting in higher impact ionization at the STI left edge. In this work, we have proposed and analyzed a novel split gate architecture to reduce impact ionization and improve off-state breakdown voltage. The underlying physics behind the improved characteristics of the proposed architecture is explained...
The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (Eeff) changes it's sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between Eeff and carrier distribution. This is the first time, when a predictive mobility model for wide...
We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Timedomain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance...
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