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In this paper, a compact model for the gate current in HKMG nMOS transistors is presented. The carrier transport through the multi-stack gate dielectrics of HKMG MOS transistors is shown to be dominated by the Trap Assisted Tunneling and Poole-Frenkel conduction mechanisms. Both these mechanisms occur simultaneously and each is dominant in a particular gate voltage range. The interdependence and simultaneity...
High performance pixel design for 550Ke full well capacity, 10µm pixel pitch and 65dB dynamic range is challenging on typical CMOS process. In general silicon processes are un-optimized for critical optical parameters. Therefore, the spectral response and photo-sensitive simulation are the immediate requirements. This paper highlights a methodology for high performance imaging pixel design in a typical...
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