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Researchers have conducted extensive research on the fatigue mechanism of silicon microstructures. But the key step in some mechanisms that localized oxide can thicken at high stress concentration sites after fatigue failure lacks support. Based on the Deal-Grove model of the thermal oxidation of silicon, we have proposed a chemical kinetics principle of cyclic stress enhanced oxidation: Tension can...
Determining the time interval for preventive maintenance is one of the most important duties in programming maintenance guides. The purpose of planning the time interval is to keep and restore the reliability of equipment, which means selecting the suitable interval to avoid failures before they occur. Existing methods of determining a fixed-time interval always ignore influences such as cumulative...
Stress is an important parameter for prosody processing in speech synthesis. However, it is not easy to stress from text analysis due to the complicated information. In this paper, we explore the novel use of the continuous lexical embedding and bidirectional long short-term memory recurrent neural network (BLSTM) model into sentential stress prediction for Mandarin speech synthesis. We look at augmenting...
We report the first demonstration of a novel GeTe liner stressor which exhibits very large volume contraction during phase-change, and its integration in p-channel FinFETs for strain engineering. Conformally grown GeTe liner with different thicknesses was formed on FinFETs with ultra-scaled gate length LG down to ∼3 nm. When GeTe changes phase from amorphous (α-GeTe) to crystalline state (c-GeTe),...
Silicon is one of the most commonly used materials for functional structure of microelectromechanical system. Its application is seriously restricted by reliability problems. To study the mechanical properties of silicon microstructures, an off-chip test device is designed, mainly consisting of piezoelectric drive, force sensor and displacement sensor. Secondly, a microstructure for bending test is...
We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔVTH and Gm loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads...
We report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed.
Abrasive flow machining technology has become an effective way for micro-hole precise machining. In this paper, we design an equipment for abrasive flow machining to achieve precise machining for peculiar parts. The Fluent, fluid dynamics software, is used here to simulate the abrasive flow micro-hole processing state. We can achieve an ideal machining program for abrasive flow through comparative...
The negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors with diamond-like carbon (DLC) liner stressor having ultra-high compressive stress (>5 GPa) are investigated for the first time. Ultra-Fast Measurement (UFM) was employed for NBTI study. Power law slopes ranging from ~0.057 to ~0.070 are reported in this work. P-FETs with higher channel strain...
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