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Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the tunneling direction have been fabricated using a novel gate-recess process, resulting in record on-current. The tunnel junction consists of InAs/GaSb with a broken band alignment. The gate-recess process results in low drain contact and access resistances; together with the favorable broken gap heterojunction,...
Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition...
The dielectric responses of polyvinylidene fluoride - based composites filled with silicon carbide nanoparticles were investigated over a wide frequency range from 50 to 5 ?? 107 Hz. The results showed that the dielectric permittivity of nanocomposites depend greatly on frequency. Furthermore, the dielectric constant increases with increasing SiC content, resulting from enhanced interfacial polarization.
Light emission at 1.54 mum from Er-doped amorphous silicon nitride layer coupled to high quality factor photonic crystal resonators is studied. Resonances exhibit line-width narrowing with pump power, signifying differential gain in the material.
In this paper, we will discuss light emission, Er sensitization and electroluminescence from small (2 nm-diameter) Si nanoclusters embedded in silicon nitride/Si superlattice structures fabricated by direct co-sputtering on Si substrates. In particular, we will show efficient Er emission sensitization via controllable non-radiative energy transfer and we will demonstrate enhanced electroluminescence...
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