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Amorphous Bi5Nb3O15 (BNO) films were grown at room temperature (RT) on a Cu/Ti/SiO2 /Si substrate using radio frequency magnetron sputtering. All the films were well formed on the Cu electrode with a sharp interface between the film and the electrode. The dielectric constant of the amorphous BNO film grown under 25 W was 46, with a low dissipation factor of 2.7% at 100 kHz. This film exhibited a low...
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