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We have demonstrated 1200V and 3300V planar 4H-SiC MOSFET technology at our 6-inch foundry. 1200V MOSFETs demonstrate good avalanche ruggedness under single-and one million (1,000,000) repetitive unclamped inductive switching (UIS) pulse tests. 1200V MOSFETs can pass one hundred (100) 10 microsecond short-circuit events at 600V bus voltage, while 3300V MOSFETs can pass 5 microsecond short-circuit...
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