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We report a low-density drain HEMT (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced current collapse. The LDD region is created by introducing negatively charged fluorine ions in the region between the gate and drain electrodes, effectively modifying the surface field distribution on the drain side of the HEMT without using field plate electrodes. Without changing the device physical...
We report a low-density drain high-electron mobility transistor (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced current collapse. The LDD region is created by introducing negatively charged fluorine ions in the region between the gate and drain electrodes, effectively modifying the surface field distribution on the drain side of the HEMT without using field plate electrodes. Without...
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