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The superb advantages of carbon nanotubes (CNTs) cannot be exhibited completely by devices using random CNT networks as channel materials due to the large tube-to-tube contact resistance. Traditional Langmuir-Blodgett (LB) method with direct compression and dipping has little performance improvement for films due to defects of CNT orientation. Here an improved LB method with gradually increased surface...
By taking advantage of the silicon-on-insulator technology and the insitu carbon nanotube (CNT) growth, new local silicon-gate carbon nanotube FETs (CNFETs) have been implemented in this paper. We propose an approach to integrate the CNFET onto the silicon CMOS platform for the first time. Individual device operation, batch fabrication, low parasitic capacitance, and better compatibility to the CMOS...
With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive...
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