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A novel high-voltage interconnection (HVI) structure with dual trenches for 500V SOI-LIGBT is proposed in this paper. Compared with the conventional dual trenches structure, the proposed structure features a shallow trench (T1) and a deep trench (T2) beneath the HVI. By employing the shallow trench (T1), the potential can easily penetrate into the deep trench (T2) and the total potential sustained...
A 500 V silicon-on-insulator (SOI) lateral pin diode is proposed. The proposed structure features dual deep-oxide trenches (DDOTs) arranged in the i-layer. In off-state, the dual DDOTs can help to sustain the potential between the cathode and the anode. With the breakdown voltage of 500 V level, the i-layer length of the proposed structure can be dramatically shortened compared with the conventional...
A silicon-on-insulator lateral insulated gate bipolar transistor with dual trenches located under the high voltage interconnection (HVI), which can be used in 500 V three-phase single chip inverter ICs, is proposed in this letter for the first time. Using the dual trenches to sustain the electric potential from the collector region, the electric field crowding induced by HVI at the silicon surface...
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