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We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime (τ) in the CdTe layer is affected by Cu diffusion from the contact. Time-resolved photoluminescence (TRPL) measurements show that τ decreases slightly as the contacting temperature increases in the temperature regime that produces “insufficient” Cu concentration in CdTe...
We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of ~360degC. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320degC. C-V analysis indicates that a ZnTe:Cu layer thickness of <~0.5 mum does not yield the degree...
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