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Silicon waveguides integrated with doped dielectric gain media may allow the design of planar light sources with electronic control. In this paper, the effects of design geometries and nonlinear losses on the gain in crystalline silicon waveguides with erbium-doped regions are investigated. We show that by using multitrench geometries, the power confinement can be increased and higher gain-to-nonlinear-loss...
We investigate the effects of design geometry and nonlinear losses on gain in silicon with erbium-doped regions. Multi-trench designs distribute intensity more uniformly and reduce the nonlinear losses including up conversion and excited state absorptions.
We show that inline silicon waveguides inside a laser cavity facilitate laser modelocking due to TPA and TPA-induced FCA, and it can also provide Raman amplification and dual wavelength lasing in the same silicon waveguide.
FCA can be used as pulse compressor if it exceeds TPA at the pulse center by using sharper pulses or higher peak powers. Tripling rise time requires 7 dB more power to achieve 80 ps output pulses.
We demonstrate a novel broadband pulse compression and modelocking scheme in silicon waveguides. Experimentally we obtain 25 fold pulse compression and 400 ps modelocked pulses. Results are limited by the RC time constant of the diode.
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