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Nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) fabricated at a maximum processing temperature of 250 operate with high field-effect mobility compared with amorphous-silicon TFTs. By reducing the oxygen content in the channel layer, ambipolar behavior can be obtained. Two levels of electron-beam lithography are employed to fabricate nc-Si TFTs with nanoscale dimensions...
Electrical characteristics of nano-crystalline silicon (nc-Si) thin-film transistors (TFTs) are fit using SPICE device models. The corresponding device model geometry is then extrapolated down to submicron dimensions using electrical data measured on a-Si:H transistors as justification. The nanoscale devices are then used to simulate a spiking neuron circuit. The frequency of output voltage pulses...
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