The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature...
The work is to fabricate a CMOS-compatible low-loss Si waveguide structures by KrF Excimer laser reformation system. It also solves the on-chip integration issues between electronics and photonics, as well as reduces the propagation loss for on-chip optical interconnect applications. By applying the mold-assisted method, the propagation loss can be reduced to 2±0.2dB/cm.
This paper reports recent efficiency results achieved by SunPower (SPWR) using industrially relevant manufacturing processes and then reexamines the following age-old question: “What efficiency can a single-junction Silicon solar cell suited to large-scale manufacturing achieve?” Through examination of a gap analysis of the SPWR cell and use of other relevant proof-points, insights are provided into...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.