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In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the...
The RESET switching of an oxide-based bipolar solid electrolyte memory with the Cu/HfO2/Pt structure is studied in this work. The parameters of the RESET point defined at the maximum of the RESET current evolution, RESET voltage (VRESET) and RESET current (IRESET), are analyzed with a statistical method. The experimental raw data show a U-shape relation between VRESET and the ON-state resistance (R...
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