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MOSFETs and Tunnel-FETs (TFETs) based on arrays of nanowires (NWs) with 10 × 10 nm2 cross-section have been fabricated with strained silicon on insulator substrates. MOSFET devices show near ideal subthreshold slope close to 60 mV/dec proving excellent channel control achieved by high-klmetal gate stack. As expected fundamental differences between MOSFETs and TFETs in current-voltage characteristics...
Schottky Barrier MOSFETs were fabricated on ultra thin body (UTB) SOI with planar and NW-array device geometry. Implantation into Silicide (IIS) was used to lower the Schottky Barrier height for n- and p-type MOSFETs. The enhanced gate control of the NW array reduces Drain Induced Barrier Lowering (DIBL) and improves the subthreshold slope in n-type MOSFETs, whereas the corrected current drops. In...
This paper presents experimental results on metal oxide semiconductor field-effect transistors (MOSFETs) featuring an array of 1000 trigated uniaxially strained nanowires with a cross-sections of 15 × 15 nm2 in combination with a HfO2/TiN gate stack. The high uniaxial strain along the wires reduces the band gap energy by approximately 140 meV and enhances the electron mobility. Ideal inverse subthreshold...
This letter presents experimental results on tunneling field-effect transistors featuring arrays of -gated uniaxially strained and unstrained silicon nanowires. The gate control of a gate stack is compared with a high-/metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on -currents were achieved with the combination of high-...
We report on the fabrication and electrical characterization of Ω-gated nanowire (NW) array pFETs on SOI. Devices with gate lengths of L = 400nm and L = 2 μm and 〈110〉 - and 〈100〉 - channel orientations were fabricated using a top-down approach. Each device consists of up to 1500 NWs with a crosssection of 20 × 20 nm2. The devices feature excellent electrical characteristics with high on-currents,...
A pulsed power generator (PPG-I) with a current of 400 kA in amplitude and 100 ns in pulse width was constructed. The development of X-pinches and the early stages of wire-array Z-pinches were investigated by X-ray backlighting using the X-pinch driven by PPG-I as X-ray source. The plasma explosion and implosion near the cross point of the X-shape wires can be clearly seen from a series of the backlighting...
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