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In this paper, the effect of Shallow Trench Isolation (STI) degradation on program disturb is studied. It is reported that trench isolation is compromised with non-uniformity in trench depth leading to increased boost loss through field isolation leakage. This degradation in boost loss further leads to elevated program disturb fails. Further investigation identified three factors namely-STI depth...
Low-voltage program/erase (P/E) operations of a NAND-type flash cell have been demonstrated using a multi-layer tunnel barrier. The concept is to achieve low voltage P/E operations similar to a scaled tunnel barrier without compromising retention by exploiting a multi-layer tunnel oxide consisting of a low-k, high-k and low k material. In this study, barrier engineered tunnel oxides of SiO2-HfOx-SiO...
The programming/erasing transient behavior of the NAND-type nanodot flash cell has been studied for the first time. By using an equivalent circuit model, the transient current through each layer in the dielectric stack can be monitored during the pulse programming/erasing. It is found that the oxide charging current leads the tunneling current during programming, and the charge built up at the storage...
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