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This paper shows that power efficiency in the power supply with PFC is improved drastically by using the new FRD with high avalanche capability. Firstly the new FRD is applied to the output rectifier of 3 kW output power in order to reduce the loss of it. High frequency switching loss decreases because the new FRD has faster trr. Secondly, we apply the new FRD to the PFC circuit. In the PFC circuit,...
A high-conductivity insulated gate bipolar transistor (IGBT) (HiGT) with a double diffused MOS structure and an n-type hole-barrier layer surrounding a p-layer (planar HiGT) is presented. The hole-barrier layer prevents the holes from flowing into the p-layer and stores them in the n-layer. The planar HiGT provides a better tradeoff between collector-emitter saturation voltage [VcE(sat)] and turn-off...
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