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In this experiment, [100]. [110] and [111] single crystal silicon wafers were interrogated by line focused ultrasonic transducer with large aperture. Lamb waves generated in the wafers were detected by same transducer, and the rf signals, V (t, z) were acquired as varying defocusing distance. Since Lamb wave is dispersive, a numerous modes were mixed in the detected rf signal. A series of signal processing...
Recently, the concept of virtual backbone (VB) has been investigated to improve the efficiency of wireless networks. Since node fault is the most significant failure type in various wireless networks, many efforts are made to improve the resilience of VB by increasing node connectivity. However, in cognitive radio networks (CRNs), communication disruption among unlicensed users (cognitive users, CUs)...
A unified analytical expression is developed to accurately describe the complex band structures in commonly used diamond and zinc-blende semiconductors. Fitting the model to the numerical complex band structures shows a significantly improved accuracy as compared with the effective mass approximation. The model is used to study the band-to-band tunneling in Si, Ge, GaAs and GaSb, with a maximum error...
Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channel orientation, uniaxial- and biaxial-strain, band-structure, mobility, and high-field transport on the...
The main challenges for Tunnel FETs are experimentally demonstrating SS<60 mV/dec, high ON currents and solving their ambipolar behavior. We have experimentally demonstrated a Double-Gate, Strained-Ge, Heterostructure Tunneling FET (TFET) exhibiting very high drive currents and SS<60 mV/dec. Due to small bandgap of s-Ge and the electrostatics of the DG structure, record high drive current of...
For the first time, the performance of uniaxial- and biaxial- strained InxGa1-xAs NMOS double gate FETs (DGFET) with (111) and (001) orientations are thoroughly investigated under ballistic transport, taking into account non-parabolic full band structure, quantum effects, band-to-band tunneling (BTBT) and short-channel effects (SCE). The real and complex band structures for different composition,...
Due to their extremely high electron mobility (mu), III-V materials are being investigated as channel materials for high performance NMOS. Although their small transport mass leads to high injection velocity (vinj), they have a low density of states (DOS) in the Gamma-valley, tending to reduce the inversion charge (Qinv) and hence reduce drive current. Furthermore, the direct band gaps of III-V materials...
Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT...
Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si
Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), 1D Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of uniaxial- and biaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field...
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