The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The integration of series connection of insulated gate bipolar transistors (IGBTs) and multi-level can achieve high voltage converters with low total harmonics distortion (THD). However, due to the transient voltage unbalance, the series connection technology has not been widely applied. Asynchronous gate drive signals, which cause series-connected IGBTs not to turn-on and turn-off at the same time,...
An insulated gate bipolar transistor (IGBT) physical model with field stop cell structure is presented in this paper. The extraction method for all parameters is also given here. The parameters are extracted for Fuji Electric 1.7kV/300A IGBT (2MBI300VN-170-50). The accuracy of the model is verified by experiments.
The nonlinear junction capacitances of power devices are critical for the switching transient, which should be fully considered in the modeling and transient analysis, especially for high-frequency applications. The silicon carbide (SiC) MOSFET combined with SiC Schottky Barrier Diode (SBD) is recognized as the proposed choice for high-power and high-frequency converters. However, in the existing...
The tail current of insulation gate bipolar transistor (IGBT), which is difficult to describe accurately, influences the series connection characteristics of IGBTs remarkably. In this paper, the series connection characteristics of 6500V/600A high voltage IGBTs (HV-IGBTs) are analyzed, and a behavior model for series connected HV-IGBTs is proposed. The model is implemented in PSIM with switches, capacitances...
In grid-connected inverter, the parameters of grid-side inductors and dc-link capacitors influence the control performances of grid currents and dc-link voltages seriously. This paper deduces the relationship between these parameters and the performance indexes, and proposes a design method for energy storage component parameters of three-level grid-connected inverter. The proposed method is implemented...
The edge field enhanced deep depletion phenomenon in metal-oxide-semiconductor (MOS) structure was demonstrated. The analysis in inversion to deep depletion of ultra-thin SiO2 and HfO2 was conducted using critical field model. By examine the field ratio between edge and bulk, it is observed that the HfO2 has larger ratio than SiO2. It is supposed the edge field enhanced deep depletion phenomenon dominates...
DC voltage control is critical for grid-connected inverters, as it contributes to reduce the DC capacitance and improve system reliability as well as MPPT performance. A predictive control scheme of DC voltage for single-stage three-phase grid-connected PV inverters is proposed based on the analysis of the energy balance relationship in one control period, while AC current is also regulated by predictive...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.