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The influence of different short circuit (SC) test conditions, including bias voltages and case temperature, on the degradation of Silicon Carbide (SiC) MOSFETs performance is investigated. Sentaurus TCAD is utilized with the trap degradation model included in the simulations to assess the density of hot holes trapped in the gate oxide during this procedure. Simulation results demonstrate that higher...
The long-term operational reliability of silicon carbide (SiC) MOSFETs needs to be further verified before they could replace silicon counterparts in power applications. In this paper, the failure mechanism of commercial 1.2-kV SiC MOFSETs under repetitive short-circuit (SC) tests has been investigated. Relatively low stress defined as low bias voltage and short SC duration is imposed on the devices,...
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