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Physical unclonable functions (PUFs) have become commercially available for anti-counterfeiting and authentication applications. PUF circuits are built on ASICs but can be implemented on FPGAs. For many electronic products, FPGAs are used in order to shorten development periods and reduce costs. Therefore, implementing PUFs on FPGAs can improve security in nearly all electronic products. However,...
A boosting pass gate (BPG) suitable for a programmable routing switch including a $c$ -axis aligned crystal In-Ga-Zn-O (CAAC-IGZO) field effect transistor (FET) is proposed. The CAAC-IGZO is one of crystalline oxide semiconductors (OS). The proposed BPG (OS-based BPG, OS BPG) has a combination of a pass gate (PG) and a configuration memory (CM) cell utilizing a CAAC-IGZO FET with extremely low OFF-state...
An FPGA employing c-axis aligned crystal In-Ga-Zn oxide (CAAC-IGZO) FET [1] based configuration memories (CMs) is known to need no reconfiguration thanks to nonvolatile CMs, shows high operation speed due to boosting effect of pass gates used in routing switches (RS) [2], and easily realizes fine-grained multi-context (FG-MC) architecture [2] because CMs which need very low power to keep the contents...
Crystalline In-Ga-Zn Oxide (IGZO) including c-axis aligned crystal (CAAC) enables FETs to show high reliability and extremely low off-state current. CAAC-IGZO technology is expected to grow to main technology of next-generation displays and is already contributing to mass-production of liquid crystal displays. In this paper by focusing on a very important feature of CAAC-IGZO FET, extremely low off-state...
A novel CMOS image sensor including a pixel with a hybrid structure of an oxide semiconductor FET (OS-FET) and Si(SOI)-FETs has been developed. The OS-FET has an extremely low off-state current, and thus can form a highly insulating charge storage node in combination with SOI. We have therefore applied the OS-FET to an electronic global shutter CMOS image sensor and confirmed improvement in imaging...
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