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Here, we report the effect of channel thickness on the performance of a InGaSb-on-insulator FET with 15-nm gate length. The ballistic current-voltage characteristic is computed by nonequilibrium Green’s function method using thickness-dependent effective mass, which is extracted from tight binding dispersion. Simulation result reveals that the threshold voltage and subthreshold slope decrease with...
Here we report effects of gate length (Lg) scaling on the ballistic performance of a Si nanowire (NW) FET using three dimensional quantum simulation. Three different gate length 10nm, 12nm & 15nm are analyzed while 3nm diameter of the NW are taken. Current-Voltage characteristic is obtained by self-consistently solving the Non Equilibrium Greens Function (NEGF) transport equation with Poisson's...
This paper investigates the effects of interlayers to reduce the threading dislocation density at the top surface of the epilayer in step-graded InGaN heteroepitaxy. The reaction kinetic coefficients are considered as key parameter in the dislocation reduction and calculated analytically. The reaction model has been solved numerically with different number of interlayer. A significant improvement...
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