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Metal source/drain (S/D) Ge nanowire MOSFETs with a compressive strain as high as 3.8% were fabricated by the 2-step Ge-condensation technique without intentional doping for the S/D. Record high inversion hole mobility (μeff = 855 cm2/Vs @ Ns = 5×1012cm−2) and saturation drain current 731µA/µm at Vd=−1V were achieved among Ge nanowire pFETs ever reported. It is found that the extremely low contact...
An experimental study of mobility and velocity enhancement effects is reported for highly strained short-channel p-channel field-effect transistors (pFETs) using a damascene-gate process on Si (100) and (110) substrates. The relationship between the mobility and the saturation velocity of hole under a compressive stress over 2.0 GPa is discussed. The local channel stress of 2.4 GPa is successfully...
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