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Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a BCl3 plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The primary factor behind this effect is the noticeable lowering of a potential barrier on the GaN surface through...
A technology of industrial decoration of majolica, faience, porcelain, and pottery using polymer-powder pigments is developed and implemented. The technological schemes of single-color and multi-color decoration of ceramics using such pigments are considered. Polymer-powder pigments can be used to decorate a wide range of ceramic products using an energy-saving technology. Two decoration technologies...
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