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Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship...
The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model.