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A source-switched charge pump (SSCP) with reverse leakage compensation technique is proposed to reduce spur level of wideband PLL induced by the reverse sub-threshold leakage of the charge pump. This technique can set the source–drain voltage of current-source N-type MOS (NMOS)/P-type MOS to be close to zero at off-state of the charge pump and thus reduce the reverse leakage. Compared with the conventional...
ESD sensitive test was performed to verify the design of circuit protection unit. The failure ICs were analyzed by OBIRCH technique. Three anomalous thermally sensitive sites were localized including I/O and VCCIOs. OBIRCH analysis confirmed the failure sites were directly connect to the pads, mostly ESD protection units, decoupling capacitor and internal inverter. Physical failure analysis confirmed...
When several high voltage direct current (HVDC) systems simultaneously recover after severe faults, absorbing large amounts of reactive power from the receiving AC systems, presents new challenges for the transient voltage stability of multi-infeed HVDC (MIDC) systems. Actually DC power recovery characteristics could be controllable to some extent by selecting voltage dependant current order limiter...
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