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This paper discloses the development of modular front-end medium-voltage solid-state transformer (SST) to show system level design, circuit topology, and prototype test results. Each multilevel front-end module consists of two stages: (1) ac to dc boost converter with power factor correction dc and (2) isolated dc-dc LLC converter. The proposed system has been designed, simulated, and fabricated with...
This paper presents the Ultra-WideBand (UWB) double-balanced Gilbert-cell mixer by using CMOS 0.18-µm process. At input port, using the Marchand-balun to supply difference phase. It uses the cross-coupled pair to supply negative resistance. By utilizing the cross-coupled pair in parallel with the load(RL) to increase the conversion gain (CG). The mixer offers a peak gain of 9.04 dB, the 3 dB bandwidth...
We propose a novel non-classical complementary metal oxide semiconductor (CMOS) inverter, which is composed of a Gated control NNP for driver N-type transistor (Gated-NNP) and a Gated control PPN for load P-type transistor (Gated-PPN). These two transistors have the same doping architecture with tunnel field effect transistor (TFET), but not use tunneling current mechanisms to achieve complementary...
This paper discloses the development of 15-kV class intelligent universal transformer (IUT) to show system level design, circuit topology, and prototype test results. The complete system is split into two stages: (1) high-voltage ac to low-voltage dc and (2) low-voltage dc to low-voltage ac. With the adoption of silicon carbide (SiC) devices, the high-voltage front-end ac to low voltage dc conversion...
A new class of hybrid soft-switching dc-dc converters combining a half-bridge LLC converter and a full-bridge phase-shift modulated converter is proposed for electric vehicle (EV) on-board charger applications. The hybridization allows the converter operating under soft-switching condition in a wide input and output voltage range and from true zero to full load condition. It not only eliminates possible...
Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage...
A new switch design method by applying depletion-mode field effect transistor for dual-band GSM switch diplexer module is presented here. If compared with switch module implemented by using PIN diode, the new module would not only save more currents, consuming only around 0.4 mA in transmitting mode, but also match totally in terms of logic control function and pin-to-pin replacement. If compared...
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