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In this work, the conventional threshold voltage () extraction method assuming ohmic contacts in organic thin-film transistors (OTFTs) was shown to be difficult to obtain the intrinsic values for devices with non-negligible contact properties. A simple extraction method based on a modified analytical current–voltage expression in the saturation regime was thus...
In this paper, utilized scanning current voltage microscopy (SVIM) techniques was used to investigate charge transport and trapping in the individual nanowires InN (NWs) and nanonetworks. SVIM images indicate non-uniform surface barrier height on NWs, strongly affected by surface deformations.The Ip-Vp measurements indicate type-II heterostructure band alignment causing unusually large probe current...
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