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Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry‐compatible synthesis techniques is of key importance. In this respect, it is important...
This paper presents a low dark current planar-type InGaAs guard-ring PIN photodiode using an atomic layer deposited (ALD) Al2O3 passivation. The fabricated guard-ring PIN photodiode with the Al2O3 passivation shows a reduced dark current density of 1.4×10−6 A/cm2 and an increased R0·A product of 1.4×105 Ω·cm2. We found that the dark current density was reduced by 60 % simultaneously using the guard-ring...
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