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The fabrication of through silicon vias with high aspect ratio is one of the key technologies for the miniaturization of 3-D integration systems. Cu as filling metal in vias can diffuse into the Si substrate of interposers and, therefore, reduce the reliability of the electronic components during their operation. Co alloys are considered to be the promising barrier materials preventing Cu diffusion...
Novel and promising layered oxide cathode materials Li(Ni,Mn,Co)O2, with improved capacity and high stability during cycling, were obtained by cationic substitution and by optimization of the synthesis conditions. These cathode materials were prepared by self-combustion method using metal nitrates and sucrose as fuel. Synthesis was then followed by annealing at 900°C during 1h. The temperature and...
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